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PD - 9.1382A
IRFP054N
HEXFET(R) Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 0.012
G
ID = 81A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
81 57 290 170 1.1 20 360 43 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.90 --- 40
Units
C/W
8/25/97
IRFP054N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/T J
RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Qgd t d(on) tr t d(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 55 --- --- 2.0 30 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.06 --- --- --- --- --- --- --- --- --- --- 11 66 40 46 5.0 13 2900 880 330
Max. Units Conditions --- V V GS = 0V, I D = 250A --- V/C Reference to 25C, ID = 1mA 0.012 VGS = 10V, I D = 43A 4.0 V VDS = VGS , ID = 250A --- S V DS = 25V, I D = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 I D = 43A 23 nC VDS = 44V 53 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- I D = 43A ns --- R G = 3.6 --- RD = 0.62, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 81 240 81 A 290 1.3 120 370 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 43A, VGS = 0V TJ = 25C, IF = 43A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Uses IRF1010N data and test conditions Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4
VDD = 25V, starting TJ = 25C, L = 390H
RG = 25, IAS = 43A. (See Figure 12)
ISD 43A, di/dt 260A/s, VDD V(BR)DSS ,
TJ 175C
IRFP054N
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I , D ra in -to -S o u rce C u rre n t (A ) D
I , D ra in -to -S o u rce C u rre n t (A ) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP
100
100
4 .5V 20 s P UL SE W IDTH TC = 17 5C
0.1 1 10 100
4 .5V
10 0.1 1
20 s PU L SE W ID TH TC = 2 5C
10
A
10
A
100
V D S , Drain-to-Source Voltage (V )
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R D S (o n) , D ra in -to -S o u rc e O n R e s ista n ce (N o rm a lize d )
I D = 72 A
I D , D r ain- to-S ourc e C urre nt (A )
2.5
TJ = 2 5 C
100
TJ = 1 7 5 C
2.0
1.5
10
1.0
0.5
1 4 5 6 7
V DS = 2 5 V 2 0 s P U L SE W ID TH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
V G S , Ga te-to-S o urce V oltage (V )
T J , Junction T emperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFP054N
5000
4000
V G S , G a te -to -S o u rc e V o lta g e (V )
V GS C is s C rs s C is s C o ss
= 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d
20
I D = 4 3A V D S = 4 4V V D S = 2 8V
16
C , C a p a cita n ce (p F )
3000
C os s
12
2000
8
C rs s
1000
4
0 1 10 100
A
0 0 20 40 60
FO R TE ST C IR C U IT SEE FIG U R E 13
80 100 120 140
A
V D S , Drain-to-Source V oltage (V)
Q G , T otal G ate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
I S D , R everse Drain C urrent (A )
O PER ATION IN TH IS AR EA L IMITED BY R DS (on)
10 s 100 100 s
100
T J = 17 5 C T J = 2 5C
I D , D ra in C u rre n t (A )
1 ms 10 10m s
10 0.4 0.8 1.2 1.6 2.0
VGS = 0 V
2.4
A
1 1
T C = 2 5C T J = 1 75 C Sing le P ulse
10 100
2.8
A
V S D , Source-to-D rain Voltage (V )
VD S , D rain-to-S ource V oltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFP054N
100
VDS LIMITED BY PACKAGE VGS RG
RD
D.U.T.
+
80
- VDD
I D , Drain Current (A)
10V
60
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS
20
90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
1
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
D = 0.50
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.1
PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C
0.01 0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFP054N
1000
E A S , S in g le P u ls e A v a la n ch e E n e rg y (m J)
15 V
TO P
800
BO TTO M
ID 18 A 3 1A 43A
VDS
L
D R IV E R
600
RG 20V tp
D .U .T IA S 0 .0 1
+ V - DD
A
400
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS tp
200
0
V DD = 25 V
25 50 75 100 125 150
A
175
St arting TJ , Junct ion T em perature (C )
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFP054N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRFP054N
Package Outline
TO-247AC Outline Dimensions are shown in millimeters (inches)
1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .25 (.0 1 0) M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 1 2 3 -C 1 4.8 0 (.5 8 3 ) 1 4.2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 )
LEAD AS SIGN MENT S 1 2 3 4 G ATE DRAIN SO URCE DRAIN
-DDBM 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2 .5 0 (.0 8 9) 1 .5 0 (.0 5 9) 4
2X
5. 50 (.2 17 ) 4. 50 (.1 77 )
NOT ES : 1 DIME NSIO NING & TO LERAN CING PE R AN SI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS IO N : IN CH . 3 CO NF ORM S T O JEDE C O UTLINE T O-247-A C.
2 .4 0 (.09 4 ) 2 .0 0 (.07 9 ) 2X 5 .45 (.2 1 5) 2X
1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .25 (.0 10 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) C AS
0 .8 0 (. 03 1 ) 3 X 0 .4 0 (. 01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 )
Part Marking Information
TO-247AC E X AM PL E : T H IS I S A N IR F1 010 E XAM P LE IT H H A S S E MB LY FP E3 0 W : T IS IS A N IR L OT W IT H E 9 B1M L Y CO D AS SE MB
L O T C O D E 3 A1 Q
A
A
I NT E RN A TIO N AL IN TER N AT IO N AL R E C TIF IE R R EC T IF IER LOG O
LOGO
P T T NU M P ARARN U M B ERBE R
IRIRF 10 10 F PE 3 0
9246 1M 3 A19B 9 3 0 2 Q D A TE C OD E
D A TE C WD E (Y YW O ) (Y YW W ) Y Y = YE A R YY = YE A R W W = W EE K W W W EE K
A SS E Y A S SEM B LMB LY LOT E L O T C O DC OD E
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

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